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STP9434 PSBH50 BYT28B N5400 C102M C102M 19401137 82217
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  ds30028 rev. a-2 1 of 2 mbr1070ct-mbr10100ct www.diodes.com  diodes incorporated mbr1070ct - mbr10100ct 10a high voltage schottky barrier rectifier features l m a n p d e k c b g 12 3 j hh pin 1 pin 3 pin 2 case to-220ab dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e  6.35 g 12.70 14.73 h 2.29 2.79 j 0.51 1.14 k 3.53  4.09  l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25  c unless otherwise specified  schottky barrier chip  guard ring die construction for transient protection  low power loss, high efficiency  high surge capability  high current capability and low forward voltage drop  for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  plastic material: ul flammability classification rating 94v-0 mechanical data  case: molded plastic  terminals: plated leads solderable per mil-std-202, method 208  polarity: as marked on body  weight: 2.24 grams (approx)  mounting position: any  marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 1070ct mbr 1080ct mbr 1090ct mbr 10100ct unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 70 80 90 100 v rms reverse voltage v r(rms) 49 56 63 70 v average rectified output current (note 1) @ t c = 100  c i o 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 120 a forward voltage drop @ i f = 5.0a, t c = 125  c @ i f = 5.0a, t c = 25  c @ i f = 10a, t c = 125  c @ i f = 10a, t c = 25  c v fm 0.75 0.85 0.85 0.95 v peak reverse current @ t c = 25  c at rated dc blocking voltage @ t c = 125  c i rm 0.1 50 ma typical junction capacitance (note 2) c j 300 pf typical thermal resistance junction to case (note 1) r  jc 3.0 k/w voltage rate of change dv/dt 10,000 v/  s operating and storage temperature range t j, t stg -65 to +150  c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc.
ds30028 rev. a-2 2 of 2 mbr1070ct-mbr10100ct www.diodes.com 0.1 1.0 10 100 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics 0 50 100 150 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive surge current 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g . 4 t y pical junction capacitance t= 25 c j f = 1.0mhz 0 2 4 6 8 10 0 50 100 150 i , average fwd current (a) (av) t , case temperature ( c) c fi g . 1 forward current deratin g curve


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